Appeal No. 2000-0037
Application 08/627,631
processing more substrates in the system between cleanings
than in a process under substantially said identical
processing conditions using nitrogen as carrier gas.
14. A method for forming a layer on a substrate under
processing conditions which require a cleaning of a
substrate processing system upon depositing an accumulated
deposited film thickness when using nitrogen in said system
under conditions substantially similar to said processing
conditions, said method comprising the steps of:
flowing a process gas containing silicon, oxygen, and dopant
atoms into a substrate processing system;
flowing helium gas into said system; and
depositing an accumulated deposited film thickness of
greater than said accumulated deposited film thickness of
about 350 :m on n substrates before a next cleaning of said
system.
25. A process for forming a layer on a substrate in a
reactor, said process comprising the steps of:
(a) depositing a film comprising doped silicon oxide on said
substrate from a reaction of reactants including silicon,
oxygen and dopant atoms, wherein said depositing step uses
helium as a carrier gas, and said depositing step occurs at
a pressure of between about 10-760 torr and a temperature of
between about 100-750°C;
(b) processing n substrates using step (a); and
(c) cleaning said reactor after depositing an accumulated
deposited film thickness on said n substrates at least 50%
greater than that for a process using nitrogen carrier gas
under conditions substantially similar to processing
conditions comprising said reaction of said reactants at
said pressure and said temperature to deposit said film on
substrates.
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