Appeal No. 2000-0037
Application 08/627,631
subatmospheric pressure techniques and low pressure techniques.
At page 11, line 9 through page 13, line 15, appellants disclose
how to prepare a BPSG film on a substrate according to their
invention. At page 20 of the specification the preparation of
wafers using nitrogen as a carrier gas is disclosed. According to
the disclosure at page 20, these wafers were prepared "according
to the same recipe discussed above", an apparent reference to the
description found at page 13, line 18 through page 14, line 11
for preparing a BPSG film.
It is apparent from mere cursory inspection of the claimed
method considered in light of the above disclosure in appellants'
specification that the claimed method is not limited in any
fashion to any particular type of film or any particular method
for forming a particular film. Indeed, the scope of appellants'
claims embraces any and all prior art methods for preparing a
dielectric film such as but not limited to those referenced at
page 1 of the specification and which also use nitrogen as a
carrier gas. Accordingly, the metes and bounds of the terminology
"under substantially identical conditions" cannot be determined
because it is unclear what method is being claimed. We conclude
that a person having ordinary skill in the art would not have
been able to ascertain at the time appellants made their
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