Appeal No. 2000-0769
Application 08/997,326
DECISION ON APPEAL
This is a decision on appeal under 35 U.S.C. § 134 from
the final rejection of claims 8 and 10-21.
We reverse.
BACKGROUND
The invention relates to a method of fabricating a thin
film transistor (TFT) comprising the steps of: (1) depositing
an active region comprising a polycrystalline Si Ge
1-x x
(poly-Si Ge ) alloy material and then a channel layer of
1-xx
silicon, to form a composite; (2) treating the composite by
crystallization or excimer laser annealing; and (3) depositing
a gate.
Claim 8 is reproduced below.
8. A method of fabricating a one-gate thin film
transistor, having an active region and a gate, wherein
said active region comprises a poly-Si Ge alloy material
1-x x
and channel layer of silicon, in which the channel layer
of silicon is interposed between the poly-Si Ge alloy
1-x x
material and the gate, comprising:
depositing a gate,
depositing an active region comprising a poly-Si Ge
1-x x
alloy material layer and a channel layer of silicon, to
form a composite, and
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