Appeal No. 2000-0769
Application 08/997,326
polycrystalline or amorphous form; claim 8 requires deposition
of the polycrystalline form.
The Examiner finds: (1) King does not teach forming a
silicon layer on top of the poly-SiGe alloy material layer
(FR5; EA4); and (2) King teaches recrystallization of the
poly-SiGe alloy material layer in Table 1, step 3, but does
not teach treating the composite by excimer laser annealing
(FR6; EA6).
The Examiner finds that Solomon teaches an active region
of a pseudomorphic SiGe alloy 2 and a channel layer of
silicon 3, where the silicon layer provides high mobility
charge carriers at the interface between the SiGe and the
upper silicon layer to make an improved device (FR5; EA4-5).
The Examiner concludes that one of ordinary skill in the art
would have been motivated by Solomon to provide a channel
layer of silicon above the poly-SiGe of King to increase the
mobility of charge carriers in the channel, thereby improving
the electrical characteristics of the device (FR6; EA5).
Appellants argue that pseudomorphic materials are single
crystal materials and that a pseudomorphic lattice has a
different structure and different operating characteristics
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