Appeal No. 2000-0769
Application 08/997,326
treating the composite with at least one method
selected from the group consisting of crystallization and
excimer laser annealing,
wherein said depositing a gate occurs subsequent to
said depositing an active region and said treating the
composite, wherein x ranges from 0.05 to 0.4 atomic %.
The Examiner relies on the following references:
Solomon et al. (Solomon) 5,019,882 May 28,
1991
Burghartz et al. (Burghartz) 5,461,250 October 24,
1995
(filed August 10,
1992)
Ohtani et al. (Ohtani) 5,643,826 July 1, 1997
(filed October 25,
1994)
Tsu-Jae King and Krishna C. Saraswat, Polycrystalline
Silicon-Germanium Thin-Film Transistors, IEEE Trans. on
Electron Devices, Vol. 41, No. 9, September 1994,
pp. 1581-1591 (hereinafter "King").
Claims 8 and 10-21 stand rejected under 35 U.S.C.
§ 103(a) as being unpatentable over King, Solomon, and Ohtani.
The Examiner cites Burghartz for additional background
material (examiner's answer, p. 6).2
References relied upon to support a rejection should2
be positively included in the statement of the rejection. See
In re Hoch, 428 F.2d 1341, 1342 n.3, 166 USPQ 406, 407 n.3
(CCPA 1970); Ex parte Movva, 31 USPQ2d 1027, 1028 n.1 (Bd.
Pat. App. & Int. 1993).
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