Appeal No. 2000-0769
Application 08/997,326
silicon" itself does not specifically define the order of
depositing (e.g., depositing a layer of poly-SiGe and then a
channel layer of silicon). However, the order can be
determined from the preamble which states that the channel
layer of silicon is interposed between the poly-SiGe alloy
material and the gate.
King discloses a thin-film transistor (TFT) having an
active channel region of poly-Si Ge alloy material and a
1-x x
gate. The poly-Si Ge alloy material may be produced by a
1-x x
high-temperature process in which the channel layer is
deposited in polycrystalline form (p. 1581, right col.), which
meets the claim limitation of "depositing an active region
comprising a poly-Si Ge alloy material." The poly-Si Ge1-x x 1-xx
alloy material may be also produced by a low-temperature
process in which the channel layer is deposited in amorphous
form (p. 1581, right col.) and converted to polycrystalline
form, which does not meet the limitation of "depositing an
active region comprising a poly-Si Ge alloy material." As
1-x x
discussed in connection with Appellants' Table 1
(specification, p. 13), Si Ge films may deposited in either
1-x x
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