Appeal No. 2001-1523
Application No. 08/731,236
The disclosed invention is directed to a manufacturing
process for a semiconductor device having semiconductor memories
and bipolar transistors. The process includes forming contact
holes for the semiconductor memories in an insulating film, and
concurrently forming a plurality of openings in an insulating
film, and forming bipolar transistors at the locations of the
additional openings. In specific embodiments, appellant’s
claimed method includes forming the bipolar transistors with
characteristics different from each other.
Further understanding of the invention can be obtained by
reading the following claim.
1. A manufacturing process for a semiconductor device
having a semiconductor memory circuit region containing
semiconductor memories, and a peripheral circuit region
disposed around said semiconductor circuit region and
containing bipolar transistors, said process comprising
the steps of:
forming contact holes, for said semiconductor
memories, selectively in an insulating film in said
semiconductor memory circuit region;
forming a plurality of openings selectively in an
insulating film, concurrently with forming one of said
contact holes, in bipolar transistor forming regions;
forming contact conductors in said contact holes;
and
2
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 Next
Last modified: November 3, 2007