Appeal No. 2001-1064
Application No. 09/164,069
composite porous silica layer formed between the parylene layer and
the original porous silica composition. According to Appellants
(specification, page 5), the composite porous silica layer has a
relatively low dielectric constant and is able to withstand damage
from a standard chemical-mechanical polishing (CMP) procedure.
Claim 6 is illustrative of the invention and reads as follows:
6. A dielectric layer within a damascene structure of a
semiconductor device, comprising:
a porous silica layer;
a parylene layer; and
a composite layer formed between said parylene layer and
said porous silica layer, wherein said composite layer is formed by
a combination of said parylene layer and said porous silica layer.
The Examiner relies on the following prior art:
Sivaramakrishnam et al. 5,958,510 Sep. 28, 1999
(Sivaramakrishnam) (filed Jan. 08, 1996)
Lu et al. (Lu) 6,008,540 Dec. 28, 1999
(filed May 28, 1998)
Claims 6-17 stand finally rejected under 35 U.S.C. § 103(a) as
being unpatentable over Lu in view of Sivaramakrishnam.
Rather than reiterate the arguments of Appellants and the
Examiner, reference is made to the Brief (Paper No. 10) and Answer
(Paper No. 11) for the respective details.
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