Appeal No. 2002-1981
Application No. 09/316,580
Accordingly, we are in agreement with the examiner that the
specification does not support the presence of three bonding
materials in the final, claimed bonded wafer integrated circuit.
The rejection is affirmed.
Claim 13
According to the examiner, the specification fails to
disclose that the first dielectric layer is silicon dioxide as
recited in claim 13. Examiner's answer, page 15. We agree. The
portion of the specification referenced by appellants as
supporting this claim limitation (specification, page 9, lines 7-
13) states only that the handle wafer 512 is oxidized to form
oxide layer 513. The specification fails to teach that this
layer is silicon dioxide.
The rejection is affirmed.
Claims 15 and 17
Claims 15 and 17 depend from claim 10. According to the
examiner, none of the embodiments disclosed in the specification
discloses structure having the elements of claims 10 and 15 or of
claims 10 and 17. See examiner's answer, page 15. Appellants
argue that page 11, lines 2-16 and Figure 6 support the
limitations in these claims. Appeal brief, page 9. Based on our
review of the referenced portions of the specification, we are in
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