Appeal No. 2001-1118
Application 09/262,690
but substantially all of the first layer deposited on the sidewalls of the via during the Rf
biased sputter deposition of the second layer is unaffected and wherein the second liner
layer is also substantially removed from the bottom of the via during the sputter
deposition.
23. A semiconductor article comprising:
a. a material having a via;
b. a first layer deposited in the via, the first layer lining the via;
c. a second liner layer deposited on the first liner layer, the second layer is deposited
using Rf biased sputter deposition; wherein the first layer deposited on the bottom of the
via is substantially removed during the Rf biased sputter deposition of the second layer
but substantially all of the first layer deposited on the sidewalls of the via during the Rf
biased sputter deposition of the second layer is unaffected.
8. The applicants’ specification defines “substantially removed” as follows:
By “substantially removed” it is meant that the amount of first deposited material
remaining on the bottom of the via, 100, after the sputter deposition is insufficient to
significantly effect the electrical and capacitive potential of the final structure.
(Application at 12, lines 1-5).
The Chakravorty reference
9. Chakravorty discloses an interconnect structure with a layer of tantalum metal and
tantalum oxide in between the conductor and the insulator in the interconnect structure. (Col. 3,
lines 1-4). The tantalum/tantalum oxide layer is patterned to expose the underlying electroplating
seed layers, while maintaining electrical contact between the electroplating seed layers and the
edges of the substrate through the tantalum layer. (Col. 3, lines 51-55).
Chakravorty explains that “[t]he underlying tantalum layer will ensure good electrical
interconnection of all of the individual plating seed layers” (col. 6, lines 14-16) and that the
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