Appeal No. 2001-1118 Application 09/262,690 but substantially all of the first layer deposited on the sidewalls of the via during the Rf biased sputter deposition of the second layer is unaffected and wherein the second liner layer is also substantially removed from the bottom of the via during the sputter deposition. 23. A semiconductor article comprising: a. a material having a via; b. a first layer deposited in the via, the first layer lining the via; c. a second liner layer deposited on the first liner layer, the second layer is deposited using Rf biased sputter deposition; wherein the first layer deposited on the bottom of the via is substantially removed during the Rf biased sputter deposition of the second layer but substantially all of the first layer deposited on the sidewalls of the via during the Rf biased sputter deposition of the second layer is unaffected. 8. The applicants’ specification defines “substantially removed” as follows: By “substantially removed” it is meant that the amount of first deposited material remaining on the bottom of the via, 100, after the sputter deposition is insufficient to significantly effect the electrical and capacitive potential of the final structure. (Application at 12, lines 1-5). The Chakravorty reference 9. Chakravorty discloses an interconnect structure with a layer of tantalum metal and tantalum oxide in between the conductor and the insulator in the interconnect structure. (Col. 3, lines 1-4). The tantalum/tantalum oxide layer is patterned to expose the underlying electroplating seed layers, while maintaining electrical contact between the electroplating seed layers and the edges of the substrate through the tantalum layer. (Col. 3, lines 51-55). Chakravorty explains that “[t]he underlying tantalum layer will ensure good electrical interconnection of all of the individual plating seed layers” (col. 6, lines 14-16) and that the 4Page: Previous 1 2 3 4 5 6 7 8 9 NextLast modified: November 3, 2007