Appeal No. 2002-1046
Application 08/861,831
an amplifying type solid-state imaging device such as a MOS
(metal oxide semiconductor) solid-state imaging device. See page
1 of Appellant’s specification. Figure 1 shows an example of a
capacity loaded operation system amplifying type solid-state
imaging device. A load capacity element 8 for holding a signal
voltage is connected through an operation MOS switch 7 to a
vertical signal line 5. An operation pulse is applied to the
gate of the operation MOS switch 7. The load capacity element 8
is connected to the drain of the horizontal MOS switch 9, and the
source of this horizontal MOS switch 9 is connected to a
horizontal signal line 10. See page 2 of Appellant’s
specification. Figure 2 is a plan view illustrating a horizontal
MOS switch shown 9 in figure 1. See page 5 of Appellant’s
specification. Since the source regions 22s of the horizontal
switches 9 are connected to the horizontal signal line 10, a
parasitic capacity of the horizontal line 10 is increased, thus
lowering a detection sensitivity of the charge detecting circuit
16. See page 6 of Appellant’s specification. Thus, it is the
object of Appellant’s invention to provide a solid-state imaging
device wherein a detection sensitivity can be improved by
decreasing a parasitic capacity of a horizontal signal line. See
page 6 of Appellant’s specification. Figure 3 is a diagram
2
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