Appeal No. 2002-1046
Application 08/861,831
consumed power. See Matsumoto, column 1, lines 17 through 29.
Matsumoto then discloses the prior art problems of using
conventional SIT systems. See Matsumoto, columns 1 through 3.
Matsumoto discloses that their invention is to eliminate the
drawbacks as mentioned and to provide a solid-state image pick-up
element which has high sensitivity and can be manufactured
easily. See Matsumoto, column 3, lines 37 through 41. Thus,
Matsumoto is concerned with using SIT for a solid-state image
pick-up element for use in low voltage and low power consuming
electronics such as video cameras.
Cauge, on the other hand, is concerned with metal oxide
silicon transistors, MOST. In particular, Cauge is concerned
with providing a new and improved high frequency, high voltage,
high power metal oxide transistor. See Cauge, column 1, lines 9
through 21, and lines 47 through 64.
We appreciate that the Examiner’s proposed modification of
substituting the column selection transistors 253 shown in figure
29 with the Cauge transistor shown in figure 8. However, we fail
to find any reason or suggestion to those skilled in the art to
make this modification. As pointed out above, Matsumoto is
concerned with the problem of providing a low power consuming and
low voltage solid-state imaging sensor. Cauge is concerned with
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