Appeal No. 2002-1046
Application 08/861,831
showing an amplifying type solid-state imaging device according
to Appellant’s invention. See page 8 of Appellant’s
specification. A load capacity element 38 for holding a signal
voltage is connected to a vertical signal line 35 through an
operation MOS switch 37. Specifically, the load capacity element
38 is connected between the vertical line 35 and a ground
potential, and the operation pulse is applied to the gate of the
operation MOS switch 37. The load capacity element 38 is
connected to the drain of the horizonal switch 39 and the source
of the horizonal MOS switch 39 is connected to a horizonal signal
line 40. See pages 11 and 12 of Appellant’s specification.
Independent claim 1 is representative of Appellant’s claimed
invention and is reproduced as follows:
1. A solid-state imaging device comprising:
a plurality of pixels;
a plurality of vertical signal lines connected to said
plurality of pixels;
a plurality of horizontal switches disposed at every
vertical signal line, each of said horizontal switches being
composed of an insulating gate type FET (field-effect transistor)
having first and second main electrodes, said first main
electrode being connected to said vertical signal lines and being
formed from first and second drain regions located at opposite
sides of a source region of said FET, and FET further having a
channel formed in first and second channel directions between
3
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