Appeal No. 2005-2277 Page 2
Application No. 10/099,680
field-induced effects occur in the transistor characteristics of such TFTs, especially
those fabricated with polycrystalline silicon formed at low temperatures. (Spec. at 1.)
A field-relief region having a lower doping concentration than the associated
drain region can be used to reduce such effects in a TFT. More specifically, the TFT
comprises an insulated gate adjacent to a crystalline semiconductor film for controlling a
conduction channel in the film between source and drain regions. The field relief region
is present between the conduction channel and drain region of the TFT. Such an
architecture, however, requires two implantations. To wit, a high-dose implant is used
to form the source and drain, whilst a low-dose implant is used to form the field-relief
region. The appellant opines that using two implantations complicates production. (Id.
at 2.)
In contrast, the appellant's invention employs a single implantation to fabricate
source, drain, and field-relief regions in a TFT. He asserts that using a single
implantation rather than two implantations simplifies manufacturing, reduces production
costs, and improves throughput and yield. (Id.) A further understanding of the
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