Appeal No. 2005-2277 Page 3
Application No. 10/099,680
invention can be achieved by reading the following claim.
1. A method of manufacturing an electronic device including a thin film
transistor, comprising the steps of:
(a) forming a semiconductor film over an insulating substrate;
(b) depositing a first masking layer over the semiconductor film and
removing portions thereof to form a plurality of holes therethrough which
extend substantially perpendicularly from the upper to the lower surface
thereof;
(c) patterning the first masking layer in a first pattern;
(d) depositing a second masking layer over the first masking layer;
(e) patterning the second masking layer to define a second pattem
that lies within the area of the first pattern; and
(f) performing an implantation in the semiconductor film using at
least the first masking layer as an implantation mask to define source and
drain regions, an undoped conduction channel between the source and
drain regions, and a field-relief region having a lower doping concentration
than the drain region between the conduction channel and the drain
region.
Claims 1-11 stand rejected under 35 U.S.C. § 102(e) as anticipated by U.S.
Patent No. 5,265,585 ("Bae").
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