Ex Parte Rohlfing - Page 3




              Appeal No. 2005-2277                                                                 Page 3                
              Application No. 10/099,680                                                                                 



              invention can be achieved by reading the following claim.                                                  
                     1. A method of manufacturing an electronic device including a thin film                             
                     transistor, comprising the steps of:                                                                
                            (a) forming a semiconductor film over an insulating substrate;                               
                            (b) depositing a first masking layer over the semiconductor film and                         
                     removing portions thereof to form a plurality of holes therethrough which                           
                     extend substantially perpendicularly from the upper to the lower surface                            
                     thereof;                                                                                            
                            (c) patterning the first masking layer in a first pattern;                                   
                            (d) depositing a second masking layer over the first masking layer;                          
                            (e) patterning the second masking layer to define a second pattem                            
                     that lies within the area of the first pattern; and                                                 
                            (f) performing an implantation in the semiconductor film using at                            
                     least the first masking layer as an implantation mask to define source and                          
                     drain regions, an undoped conduction channel between the source and                                 
                     drain regions, and a field-relief region having a lower doping concentration                        
                     than the drain region between the conduction channel and the drain                                  
                     region.                                                                                             


                     Claims 1-11 stand rejected under 35 U.S.C. § 102(e) as anticipated by U.S.                          
              Patent No. 5,265,585 ("Bae").                                                                              














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