Appeal No. 2005-2277 Page 8
Application No. 10/099,680
"ion-implantation brings out the forming of the low-concentration source and drain
regions 56,57." Col. 4, ll. 35-36. Second, referring to Figure 3E, a "gate is used as a
mask in ion-implantation of impurities with [a] high-concentration, so as to form the
high-concentration source and drain regions 59,60." Col. 5, ll. 10-12.
The absence of using a single implantation to define inter alia doped source and
drain regions and a field-relief region having a lower doping concentration than that of
the drain region negates anticipation. Therefore, we reverse the anticipation rejection of
claim 1 and of claims 2-11, which depend therefrom.
III. CONCLUSION
In summary, the rejection of claims 1-11 under § 102(e) is reversed.
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