Ex Parte Rohlfing - Page 7




              Appeal No. 2005-2277                                                                 Page 7                
              Application No. 10/099,680                                                                                 



                                            B. ANTICIPATION DETERMINATION                                                
                     "Having construed the claim limitations at issue, we now compare the claims to                      
              the prior art to determine if the prior art anticipates those claims."  In re Cruciferous                  
              Sprout Litig., 301 F.3d 1343, 1349, 64 USPQ2d 1202, 1206 (Fed. Cir. 2002).  "A claim                       
              is anticipated only if each and every element as set forth in the claim is found, either                   
              expressly or inherently described, in a single prior art reference."  Verdegaal Bros., Inc.                
              v. Union Oil Co., 814 F.2d 628, 631, 2 USPQ2d 1051, 1053 (Fed. Cir. 1987) (citing                          
              Structural Rubber Prods. Co. v. Park Rubber Co., 749 F.2d 707, 715, 223 USPQ 1264,                         
              1270 (Fed. Cir. 1984); Connell v. Sears, Roebuck & Co., 722 F.2d 1542, 1548, 220                           
              USPQ 193, 198 (Fed. Cir. 1983); Kalman v. Kimberly-Clark Corp., 713 F.2d 760, 771,                         
              218 USPQ 781, 789 (Fed. Cir. 1983)).  "[A]bsence from the reference of any claimed                         
              element negates anticipation." Kloster Speedsteel AB v. Crucible, Inc., 793 F.2d 1565,                     
              1571, 230 USPQ 81, 84 (Fed. Cir. 1986).                                                                    


                     Here, Bae "relates to a process for fabricating a semiconductor device having a                     
              gate-drain overlapped device (GOLD) structure, in particularly a MOS transistor                            
              thereof."  Col. 1, ll. 6-9.  Although the reference uses implantation to define highly doped               
              source and drain regions and lower doped regions, the examiner admits that Bae                             
              employs "an extra ion implantation step," (Examiner's Answer at  6), to do so.  For its                    
              part, the reference describes two implantations.  First, as shown in Figure 3C of Bae, an                  







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