Appeal No. 2006-1333
Application No. 10/347,849
permits deposition into a small, high aspect ratio hole at a high deposition rate with high
step coverage. In certain embodiments, the deposition rate and step coverage is aided by
the use of higher than traditionally applied pressures along with the use of hydrogen as a
carrier gas. According to Appellants (specification, page 3), the higher pressures have
been found to yield high deposition rates without sacrificing step coverage.
Claim 24 is illustrative of the invention and reads as follows:
24. A method of forming an integrated circuit, comprising:
providing a substrate with a hole having greater than a 2:1 aspect ratio, wherein the
hole has a diameter of less than about 0.25 um;
loading the substrate into a single-wafer processing chamber; and
chemical vapor depositing silicon into the hole at a rate of at least about 50 nm/min
with greater than about 80% step coverage.
The Examiner relies on the following prior art:
Venkatesan et al. (Venkatesan) 5,863,598 Jan. 26, 1999
(filed Apr. 12, 1996)
Sato et al. (Sato) 6,022,806 Feb. 08, 2000
(filed Mar. 10, 1995)
2
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