Appeal No. 2006-1333
Application No. 10/347,849
deposition processes with high deposition rates. As stated by Venkatesan, “[t]he present
invention describes ... depositing, at a high deposition rate, a high quality, uniform,
amorphous silicon and polysilicon films with good step coverage across the surface of a
substrate.” With our previous discussion in mind along with the fact that Venkatesan
disclosed invention is concerned only with high deposition rates, it is our view that,
although the exact value of a reduced deposition rate for 0.25 um width holes is not
disclosed by Venkatesan, a reasonable conclusion would be that the reduced rate would
remain within the defined high deposition rate, the lower limit of which is 50 nm/min as
presently claimed. We would further point out that it is well settled that, as in the present
situation where an explicit deposition rate value is not disclosed, even if a reference fails to
explicitly spell out every detail of a claimed invention, such a reference would anticipate a
claim if it discloses the claimed invention “such that a skilled
artisan could take its teachings in combination with his own knowledge of the particular art
and be in possession of the invention.” In re Graves, 69 F.3d 1147, 1152, 36 USPQ2d
1697, 1701 (Fed. Cir. 1995), quoting from In re LeGrice, 301 F.2d 929, 936, 133 USPQ
365, 372 (CCPA 1962).
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