Appeal No. 2006-1333
Application No. 10/347,849
discloses (column 6, lines 35-45) the filling of high aspect ratio (greater than 2:1) holes
with good step coverage (greater than 80%) at high deposition rates (500-1200 Å/minute),
but only for holes having a width greater than
or equal to 0.28 μm, not for those holes having a width less than 0.25 μm as claimed. In
support of their position, Appellants point to Venkatesan’s discussion (column 9, lines 39-
65) of the filling of high aspect ratio holes with widths of 0.25 μm in which a “reduced”
deposition rate is used. In Appellants’ view (Brief, pages 6-8; Reply Brief, pages 3-7), this
“reduced” deposition rate must be interpreted as falling below the lower limit of
Venkatesan’s self-proclaimed high deposition rate range, i.e., 500 Å/minute (or 50nm/min
in the present claim terminology).
After reviewing the Venkatesan reference in light of the arguments of record,
however, we are in general agreement with the Examiner’s position as stated in the
Answer. In particular, we agree with the Examiner (Answer, page 7) that, Appellants’
arguments to the contrary notwithstanding, Venkatesan’s successful silicon depositions
are not limited to those holes with widths greater than or equal to 0.28 μm. As discussed
by Venkatesan at column 9, lines 39-65, and referenced by Appellants as well, holes with
widths of 0.25 um are successfully filled using a two step
6
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