Appeal 2006-2769
Application 09/846,980
31. A method for manufacturing a p-type III-V nitride compound
semiconductor comprising:
growing in a chamber III-V nitride compound semiconductor layer at a
first temperature while introducing acceptor impurities into said layer to
form an acceptor-doped layer, said chamber containing one or more gases
providing hydrogen such that said hydrogen passivates at least some of said
acceptor impurities;
cooling said acceptor-doped layer to a second temperature significantly
lower than said first temperature during a cool-down process, thereby
causing said acceptor-doped layer to be a p-type layer, having p-type
conductivity and a hole density between approximately 3x1015cm-3 and
1x1018cm-3, after said cool-down process; and
after said cooling, heating said p-type layer to a third temperature
greater than the second temperature and less than 625ºC to remove hydrogen
from said p-type layer thereby increasing said hole density and lowering the
resistivity of said p-type layer.
II. PRIOR ART
As evidence of unpatentability of the claimed subject matter, the
Examiner relies upon the following references:
Nitta US 5,789,265 Aug. 4, 1998
Koike US 5,811,319 Sep. 22, 1998
Peng US 5,895,223 Apr. 20, 1999
Bour US 5,926,726 Jul. 20, 1999
Furukawa US 6,017,807 Jan. 25, 2000
Takatani US 6,100,174 Aug. 8, 2000
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