Appeal 2006-2769
Application 09/846,980
the skill of the art.” In re Boesch, 617 F.2d 272, 276, 205 USPQ 215, 219
(CCPA 1980).
VI. RELEVANT FACTUAL FINDINGS
1. The Appellants do not challenge the Examiner’s findings at pages 4
and 5 of the Answer that:
Bour et al. teaches a carrier gas of H2 is introduced with
reaction gases NH3 and TMGa and impurity gas Cp2Mg to a
reactor to form a p-type GaN layer at a temperature of 900°C
(col 6, [sic, ll.] 20-26) After formation of the p-type nitride
layer the reactant gases are switched out of the reactor and a gas
which prevents the decomposition of the III-V layer at such
high growth temperatures, NH3 is added (col 5, In [sic, ll.] 60-
65 and col 6, In [sic, ll.] 31-35). Bour et al also teaches a reactor
is cooled down to a temperature where surface decomposition
of as-grown p-type GaN layer will not further occur, where
upon attainment of the this temperature, the preventer gas, NH3,
is switched out of the reactor and the remaining cool down
occurs in molecular N and acceptor activation is preformed [sic,
performed] either as the reactor is further cooled or maintained
at a temperature of 600°C for 20-40 minutes and during the
cool down of the reactor a flow of molecular N, N2, is
maintained in the reactor. (col 6, In [sic, ll.] 40-65).
2. The Appellants do not challenge the Examiner’s determinations at
page 6 of the Answer that:
In a method of growing p-type gallium nitride, Koike et
al. teaches three p-layers of Mg-doped AlxlGa1-xlN forms a p-
layer (61) which acts as a clad layer having a hole
concentrations of 5 x 1017/cm3, 5 x 1017/cm3 and 2 x 1017/cm3
and an Mg concentrations of 1 x 1020/cm3, 1 x 1020/cm3 and 2 x
1020/cm3, respectively (col 3, [sic, ll.] 50-65). Koike also
teaches electron rays were uniformly irradiated into the p-layer
6
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