Appeal 2006-2769
Application 09/846,980
Bour et al. teaches a carrier gas of H2 is introduced with
reaction gases NH3 and TMGa and impurity gas Cp2Mg to a
reactor to form a p-type GaN layer at a temperature of 900°C
(col 6, [ll.] 20-26) After formation of the p-type nitride layer the
reactant gases are switched out of the reactor and a gas which
prevents the decomposition of the III-V layer at such high
growth temperatures, NH3 is added (col 5, In [sic, ll.] 60-65 and
col 6, In [sic, ll.] 31-35). Bour et al also teaches a reactor is
cooled down to a temperature where surface decomposition of
as-grown p-type GaN layer will not further occur, where upon
attainment of the this temperature, the preventer gas, NH3, is
switched out of the reactor and the remaining cool down occurs
in molecular N and acceptor activation is preformed [sic,
performed] either as the reactor is further cooled or maintained
at a temperature of 600°C for 20-40 minutes and during the
cool down of the reactor a flow of molecular N, N2, is
maintained in the reactor. (col 6, In [sic, ll.] 40-65).
See Br. 4-7 and Reply Br. 1-4. Nor do the Appellants challenge the
Examiner’s determinations at page 6 of the Answer that:
In a method of growing p-type gallium nitride, Koike et
al. teaches three p-layers of Mg-doped AlxlGa1-xlN forms a p-
layer (61) which acts as a clad layer having a hole
concentrations of 5 x 1017/cm3, 5 x 1017/cm3 and 2 x 1017/cm3
and an Mg concentrations of 1 x 1020/cm3, 1 x 1020/cm3 and 2 x
1020/cm3, respectively (col 3, [ll.] 50-65). Koike also teaches
electron rays were uniformly irradiated into the p-layer using a
reflective electron beam, where this irradiation changed the p-
layer into a p-type conductive semiconductor with a hole
concentration of 5 x 1017/cm3, 5 x 1017/cm3 and 2 x 1017/cm3
and a resistivity of 0.5 ohm-cm, 0.8 ohm-cm and 1.5 ohm-cm,
respectively (col 5, In [sic, ll.] 14-26). Koike et al also teaches
forming metal electrode, such as nickel or aluminum, are
formed on semiconductor devices utilizing GaN group
compounds such as A1GaInN after the semiconductor surface
is cleaned by wet chemical etching, utilizing a wet chemical
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