Appeal 2007-0879
Application 09/793,209
The record shows each of independent claims 15 and 22, and thus
claims 17, 18, and 23 through 25 dependent thereon, contain a number of
“means” limitations:
15. A thin film depositing device for depositing thin films on a
substrate comprising:
means for mixing a plurality of separately introduced organic metal
gases including a gas mixing chamber into a mixture state;
a reaction chamber for supporting a substrate;
means for supplying the mixed gas to the reaction chamber to deposit
a thin film on the substrate;
means for measuring the mixture state of the organic metal gases
supplied into the gas mixing chamber with a FTIR gas analyzer operatively
connected to one of the gas mixing chamber and the reaction chamber for
measuring the mixed organic metal gases; and
means for adjusting, if necessary, the flow rates of the organic metal
gases on the basis of results of the measurement of the mixed organic metal
gases includes pre-stored mixture state parameters and means for comparing
the measured mixture state with the pre-stored mixture state parameters and
adjusting the flow rates of the organic metal gases when the measured state
varies by a predetermined amount from the pre-stored mixture state
parameters.
22. A thin film depositing device for depositing thin films on a
substrate comprising:
means for mixing a plurality of separately introduced organic metal
gases including a gas mixing chamber, the separately introduced organic
metal gases being mixed in a mixture state;
a reaction chamber for supporting a substrate;
means for supplying the mixed gas to the reaction chamber to deposit
a thin film on the substrate;
means for measuring the mixture state of the organic metal gases
supplied into the gas mixing chamber and multimers and intermediate
products representative of the mixed gas with a FTIR gas analyzer
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Last modified: September 9, 2013