Appeal 2007-2105
Application 10/762,445
connected to said source, said Vss connection region being a heavily
doped region to reduce a Vss resistance;
wherein said Vss connection region being situated under said
bottom of said recess causes said source to have a reduced lateral
diffusion in said channel region, thereby preventing an increase in a
drain induced barrier lowering.
The Examiner relies on the following prior art in rejecting the claims:
Hori US 6,147,379 Nov. 14, 2000
Kobayashi US 6,721,205 B2 April 13, 2004
(filed Dec. 14, 2000)
The Examiner rejected claims 1, 2, 4-6, 8, 9, and 11-13 under
35 U.S.C. § 102(b) as anticipated by Hori and Kobayashi1 and claims 7 and
14 under 35 U.S.C. § 103(a) as being unpatentable over Hori and Kobayashi.
Rather than repeat the arguments here, we make reference to the Brief
and the Answer for the respective positions of the Appellants and the
Examiner.
We reverse.
ISSUE
Appellants and the Examiner disagree as to whether Hori discloses the
recited source and Vss connection regions such that the resulting reduced
lateral diffusion of the source prevents an increase in a drain induced barrier
1 Although the Examiner has based the anticipation rejection of the claims
on both Hori and Kobayashi (Answer 3), it appears that the Examiner
intended to rely on Kobayashi to show that Hori’s bit line connection is
inherently the same as the Vss connection (Answer 9). Therefore, for the
purpose of this appeal, we consider the rejection to be based only on Hori.
3
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