Ex Parte Heinonen et al - Page 3

                Appeal  2007-3202                                                                            
                Application 10/145,987                                                                       
                            a ceramic wafer;                                                                 
                            a semiconductor mass disposed upon the ceramic wafer;                            
                            at least one conductive layer embedded within the mass,                          
                      the at least one conductive layer possessing a surface                                 
                      approximately parallel to the wafer;                                                   
                            conductive shields disposed on opposite sides of the                             
                      semiconductor mass;                                                                    
                            conductive contact pads disposed on opposite sides of the                        
                      semiconductor mass, and                                                                
                            a bias element in proximity to the semiconductor mass,                           
                      the bias element producing a biasing magnetic field within the                         
                      semiconductor mass.                                                                    
                            32. A device for sensing a magnetic field, the device                            
                      comprising:                                                                            
                            a ceramic wafer;                                                                 
                            a semiconductor mass disposed upon the ceramic wafer;                            
                            at least one conductive layer embedded within the mass, the at                   
                      least one conductive layer possessing a surface approximately parallel                 
                      to the wafer;                                                                          
                            conductive contact pads disposed on opposite sides of the                        
                      semiconductor mass;                                                                    
                            a bias element in proximity to the semiconductor mass,                           
                      wherein a biasing magnetic field results within the                                    
                      semiconductor mass; and                                                                
                            conductive shields disposed on opposite sides of the                             
                      semiconductor mass.                                                                    


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