Appeal No. 95-1555
Application 07/871,530
substrate overlying said substrate of said first conductivity
type;
said layer of semiconductor material of said first
conductivity type and said semiconductor substrate of said first
conductivity type being provided with a vertical trench;
said vertical trench extending through said layer of
semiconductor material of said first conductivity type and into
said semiconductor substrate of said first conductivity type and
bottoming within said semiconductor substrate of said first
conductivity type;
a first liner of insulation material bounding the vertical
trench;
a second liner of insulation material within the vertical
trench and disposed in inwardly spaced relationship with respect
to said first liner of insulation material;
first conductive material filling the portion of the
vertical trench within said second liner of insulation material;
second conductive material filling the space in said
vertical trench defined between said first and second liners of
insulation material;
said first and second conductive materials and said second
insulation liner defining a trench capacitor in which said first
and second conductive materials are capacitor plates and the
second liner of insulation material is a dielectric layer
therebetween;
a field-effect transistor provided in said layer of
semiconductor material of said first conductivity type and
electrically connected to said trench capacitor;
said trench capacitor and said field-effect transistor
defining a memory cell;
said field-effect transistor including spaced source and
drain regions of a second conductivity type disposed in said
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