Appeal No. 95-1555
Application 07/871,530
the vertical trench provided in said semiconductor substrate
means extending through said second semiconductor layer of said
first conductivity type and said buried semiconductor layer of
said first conductivity type into said semiconductor substrate of
said second conductivity type.
The references relied on by the Examiner are as follows:
Tsuchiya 4,922,313 May 1, 1990
Kumagai et al. (Kumagai) 5,041,887 Aug. 20, 1991
(filed May 14, 1990)
Anderson et al. (Anderson) 5,216,265 June 1, 1993
(filed Dec. 5, 1990)
Claims 10 through 15 stand rejected under 35 U.S.C. § 103 as
being unpatentable over Tsuchiya and Anderson. Claims 16 through
21 stand rejected under 35 U.S.C. § 103 as being unpatentable
over Tsuchiya and Kumagai.
Rather than repeat the arguments of Appellants or the
Examiner, we make reference to the brief and the answer for the
details thereof.
OPINION
After a careful review of the evidence before us, we agree
with the Examiner that claims 10, 11, 14 and 15 are properly
rejected under 35 U.S.C. § 103. Thus, we will sustain the
rejection for these claims but we will reverse the rejection of
the remaining claims on appeal for the reasons set forth infra.
At the outset, we note that Appellants have indicated on
page 6 of the brief that the claims 10 through 21 do not stand or
6
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