Appeal No. 95-1555
Application 07/871,530
increased dopant p layer in the Tsuchiya’s trench capacitor type
dynamic random access memory. Furthemore, those skilled in the
art would have had reason to make the modification for reducing
leakage current and trench capacitance leakage as well as to
control latch up. Therefore, we find that it would have been
obvious to one skilled in the art to modify Tsuchiya by providing
the Anderson increased dopant in relation to the substrate as
recited in claims 10, 11, 14 and 15.
Turning to the Examiner’s rejection of Appellants’ claim 12,
Appellants argue on page 9 of the brief that neither Tsuchiya nor
Anderson teach or suggest “the depth of said layer of
semiconductor material of said first conductivity type as defined
by its boundary with said substrate of said first conductivity
type is located at substantially the middle depth position of the
vertical trench” as recited in claim 12. The Examiner has not
responded to this argument. After a careful review of Anderson
and Tsuchiya, we find that these references fail to teach or
suggest this limitation and thereby we will not sustain the
Examiner’s rejection of claim 12 as well as claim 13 which
depends from claim 12.
13
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