Appeal No. 95-1555
Application 07/871,530
layer of semiconductor material of said first conductivity type
and opening onto the top surface thereof;
a portion of said layer of semiconductor material of said
first conductivity type disposed between said source and drain
regions of the second conductivity type defining a channel
region;
a gate electrode of conductive material disposed above said
channel region;
a layer of insulation material interposed between said gate
electrode and said channel region and defining a gate insulator;
a region of the second conductivity type disposed in said
layer of semiconductor material of said first conductivity type
and extending between said source region and said second
conductive material defining a capacitor plate of said trench
capacitor to connect said field-effect transistor to said
capacitor of said memory cell and comprising an annular dopant
region of said second conductivity type bounding the upper
portion of the vertical trench; and
the increased dopant concentration of said layer of
semiconductor material of said first conductivity type in
relation to said substrate of said first conductivity type
limiting the growth of depletion layers to prevent linkage of the
capacitor to a capacitor of an adjoining memory cell by the
formation of a depletion layer extending toward the capacitor of
the adjoining memory cell beyond an acceptable extent.
16. A semiconductor integrated circuit device comprising:
semiconductor substrate means including substrate components
of at least a first conductivity type;
said semiconductor substrate means being provided with a
vertical trench extending thereunto from the top surface thereof;
a first liner of insulation material bounding the vertical
trench provided in said semiconductor substrate means;
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