Appeal No. 95-2347 Page 9
Application No. 07/928,642
with Kanai, Davies and Shioya. The examiner relies on Shibata
for describing a reactor with a chamber having a plasma
generation means for processing (etching) wafers that includes
the claimed structure including a gas manifold/electrode (12)
(fig. 1, col. 3, lines 10-17). The examiner acknowledges that
Shibata does not describe temperature control structure for
the gas manifold/electrode corresponding to the claimed "means
for circulating fluid..." (answer, page 3). Kanai and Davies
each disclose a plasma reactor used for etching that include
channels for circulating cooling fluid through passageways in
the electrodes (including gas manifold/electrodes) of a plasma
generator to prevent the electrodes from overheating (Kanai,
figures 9 and 10 and Davies, figure 3 and columns 3, 4 and
6) . From the above collective teachings of the prior art, the4
examiner finds that it would have been obvious to one of
ordinary skill in the art to provide the gas
manifold/electrode of Shibata with cooling media passageways
4Since we find that the teachings of Shibata, Kanai and
Davies would have rendered the claimed invention herein
obvious within the meaning of 35 U.S.C. § 103, we find it
unnecessary to discuss Shioya in our decision.
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