Appeal No. 96-1848
Application 08/161,604
DECISION ON APPEAL
This is a decision on appeal under 35 U.S.C. § 134 from
the final rejection of claims 10, 11, 13-17, and 25-36,
which comprise all of the claims pending in the application.
We affirm-in-part.
BACKGROUND
The disclosed invention is directed a semiconductor
device having a tungsten contact.
Claim 31 is reproduced below.
31. A semiconductor device incorporating a
tungsten contact, the device including a silicon
substrate, a series of dielectric layers on the
substrate, a tungsten contact extending through the
series of dielectric layers and contacting a doped
region of the substrate and an interconnect layer
disposed over the contact in a non-overlapping
configuration on at least one side thereof.
The examiner relies on the following prior art
references:
Shirai et al. (Shirai) 4,271,582 June 9,
1981
Deleonibus et al. (Deleonibus) 4,592,802 June 3,
1986
Tomozawa et al. (Tomozawa) 4,782,037 November 1,
1988
Haskell 4,964,143 October 16,
1990
Turner 5,143,861 September 1,
1992
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