Appeal No. 96-1848
Application 08/161,604
high contact resistances, without compromising the inherent
advantages of tungsten plug processing" (Br7; Br8; Br12).
It is noted that all claims are directed to a semiconductor
device having certain structural features, not to a process
of making such a device. The advantages of a device made by
the disclosed process have not been shown by appellants to
be inherent in the semiconductor device structures claimed,
no matter how they are manufactured. Implied limitations
and advantages which result from the unclaimed process will
not be read into the claims.
Claims 31, 32, 35, and 36
Turner
Appellants argue that the dielectric layers of Turner
are not configured in series (Br7, 9, 10). We find that the
spin-on glass (SOG) layer 69 and the dielectric capacitor
oxide layer 66 are dielectric layers in series (figure 12).
The claim 31 limitation of "a series of dielectric layers"
does not preclude other, non-dielectric, layers from being
interposed with the dielectric layers; i.e., it does not
require a succession of touching dielectric layers. Thus,
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