Appeal No. 1997-3979
Application No. 08/586,365
6-14). Figure 13, which incorrectly gives the depth dimension
in microns rather than angstroms, shows that when using an2
implantation energy of 30 KeV and oxide and polysilicon
thicknesses of 130D and 500D, respectively, the peak
concentration P3 of dopant occurs at a distance from the
surface of between P1 (200 microns), and P2 (in the range of
700 to 1,000 microns) (Spec. at 7, lines 19-27).
B. The claims
Claims 8 and 19, the only independent claims, read as
follows:
8. An intermediate structure from which a BICMOS
integrated circuit can be constructed, comprising:
an oxide film coating a first N-well;
a polysilicon gate atop the oxide film; and
a second N-well, isolated from the first N-well,
and having
a surface lacking substantial oxide and
a P-type layer adjacent the surface and having a
peak doping concentration within the P-type layer at less than
700 angstroms from its upper surface.
2The examiner apparently agrees with appellant's
contention (Amendment filed June 21, 1996, paper No. 27, at 3)
that "[t]he scale of Figure 13 should be angstroms, and not
microns."
-3-
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