Appeal No. 1997-3979
Application No. 08/586,365
define the desired conductivity for emitter
electrode 69e. [Col. 7, lines 43-51.]
Figure 11, which shows the dependency of junction depth on
arsenic implant dosage when the phosphorus dosage is fixed at
2E15, gives an emitter junction depth on the order of 140nm
(col. 7, lines 51-61), which is 1,400D. Figure 12, which 3
shows the same relationship when the phosphorus dosage is
fixed at 5E15, gives an emitter junction depth on the order of
300nm (col. 7, lines 61-67), which is 3,000D.
The examiner reads the claimed elements on Eklund's
Figure 10 as follows: the claimed "oxide film coating a first
N-well" is read on N-well 20' and its overlying oxide layer
(labeled 32 in Fig. 7); the claimed "polysilicon gate atop the
oxide film" is read on the MOS transistor gate (69g in Fig. 9)
and its underlying oxide layer (62 in Fig. 9); the claimed
"second N-well, isolated from the first N-well" is read on N-
well 20; and the claimed "surface lacking substantial oxide"
3Because the depth scale indicates the combined
thickness of the polysilicon layer and the emitter region, the
examiner is incorrect to state that Figures 1, 2, 11 and 12
show an emitter depth on the order of 0.4 to 0.7 microns
(Answer at
4-5).
-10-
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