Appeal No. 1997-3979
Application No. 08/586,365
19. A p-type region in a semiconductor device
having a peak doping concentration within the P-type region at
less than 700 angstroms from its upper surface, wherein the P-
type region is a base of a bipolar transistor, and wherein the
semiconductor device further comprises MOS transistors.
C. The references and rejections
The examiner's rejections are based on the following
prior art:
Eklund 5,047,357 Sep. 10, 1991
Doki et al. (Doki) 5,183,777 Feb. 2, 1993
Claim 19 stands rejected under § 102(a) as anticipated by
Doki.
Claims 8-10 stand rejected under § 103 for obviousness
over
Eklund in view of Doki.
D. The § 102(a) rejection of claim 19 based on Doki
Doki discloses a technique for forming a shallow junction
having a thickness of 1,000D or less and a high impurity
concentration (col. 3, lines 18-22). This technique can be
used to provide a semiconductor device having a shallow
junction, such as a bipolar transistor or a MOS transistor, in
which a channeling effect is prevented (col. 3, lines 23-26).
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