Appeal No. 1997-3979 Application No. 08/586,365 traditional process (see, for example, Applicant's specification, page 1, lines 14-18). [Brief at 7.] This argument fails to take into account that the artisan may have been willing to increase the number of process steps in order to obtain a thinner base region and better transistor performance. See Winner Int'l Royalty Corp. v. Wang, 202 F.3d 1340, 1349 n.8, 53 USPQ2d 1580, 1587 n.8 (Fed. Cir. 2000) ("The fact that the motivating benefit comes at the expense of another benefit, however, should not nullify its use as a basis to modify the disclosure of one reference with the teachings of another. Instead, the benefits, both lost and gained, should be weighed against one another."). Appellant's other unpersuasive argument is that Doki's technique requires a second annealing at a temperature of 900 degrees C to form the source and drain regions of the MOS transistor (col. 6, lines 43-49) and that such thermal annealing would adversely impact any bipolar devices, as noted in appellant's specification at 5, second full paragraph. This argument is unconvincing because the rejection does not rely on Doki's disclosed technique for forming shallow source and drain regions in a MOS transistor. Instead, the -14-Page: Previous 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 NextLast modified: November 3, 2007