Appeal No. 1998-0341
Application No. 08/476,293
organic-containing dielectric layers with imbedded vias on a
semiconductor device, allowing electrical connections between
conductors above and below the organic dielectric layer.
Looking at Figure 2C, conductors 18 are located on substrate
10, and both are covered with inorganic encapsulation layer
32. Organic dielectric 22 is provided thereover, with
inorganic cap layer
24 on top. The side walls of each via are covered with
inorganic passivation layer 30.
Representative independent claim 11 is reproduced as
follows:
11. A seminconductor device which comprises:
(a) a layer of patterned conductors formed on
a substrate and having an inorganic substrate
encapsulation layer deposited conformally over said
conductors and
said substrate;
(b) an organic-containing dielectric layer filling
spaces between and covering said conductors, said
organic- containing layer having a dielectric constant
of less than 3.5, said organic-containing layer
composed of a material containing 10% to 100% polymer
by weight;
(c) a cap layer comprised of inorganic material
deposited over said organic-containing layer;
-2-2
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