Appeal No. 1998-2948
Application 08/400,861
semiconductors in devices using thin-film transistors like
active matrix LCDs (translation, pp. 2, 21). The electrodes
"consist of aluminum alloys containing 0.1-10 at% of one, two
or more of Fe, Co, Ni, Ru, Rh, Ir or 0.05-15 at% of one, two
or more of rare-earth elements as alloying ingredients"
(translation, p. 2). The rare earth elements also include Y
(translation, p. 10). Yamamoto discloses that a low specific
resistance is the most important required characteristic for
the electrodes of semiconductors used in large-scale LCDs to
prevent signal delay (translation, p. 6). The Al alloy films
containing Fe, Co, Ni, Ru, Rh, and Ir or containing a rare
earth element "had excellent heat resistance and were hard to
cause hillocks in a heating process after film formation
(i.e., after the formation of said electrode films) and had a
low specific resistance after said heating process"
(translation, p. 11).
THE REJECTION
Claims 1-6 stand rejected under 35 U.S.C. § 103(a) as
being unpatentable over Kiyota in view of Hochido, Yamamoto,
Joshi, and/or Lee.
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