Appeal No. 1999-1637
Application 08/417,537
and has objected to claims 4, 7, 20, 32, 33 and 37-43. Thus, claims 1-3, 5, 6, 8, 18, 19,
30, 31 and 34-36 remain for our consideration on appeal.
Rep resentative claim 18 is reproduced below:
18. A semiconductor device comprising:
a substrate;
a first transistor overlying the substrate, the first transistor having a first current
electrode underlying a channel region, and a select gate electrode laterally adjacent the
channel region; and
a second transistor overlying the first transistor and being serially coupled to the first
transistor, the second transistor having a second current electrode overlying the channel
region wherein the first and second current electrodes are separated by the channel
region, a floating gate electrode adjacent the channel region, and a control gate electrode
laterally adjacent the floating gate electrode, wherein the second transistor is a floating
gate storage transistor for storing a logic bit value and the first transistor is a select gate
for selecting the second transistor.
The following references are relied on by the examiner:
Ono 5,402,371 Mar. 28, 1995
(filing date Oct. 7, 1993)
Wong 5,739,567 Apr. 14, 1998
(effective filing date Nov. 2, 1992)
Sugaya (Japanese Kokai) 61-256673 Nov. 14, 1986
2
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