Appeal No. 1999-2576
Application 08/836,960
A. The invention
The invention is a lateral bipolar transistor having the
following construction:
Numeral 1 designates a bulk layer of SOI (silicon-on-
insulator) substrate. Layer 2 is an insulator layer.
Numerals 9-11 respectively designate the emitter, base, and
collector regions of a silicon layer, upon which has been
formed a silicon nitride diffusion barrier layer 4. After a
silicon oxide layer 5 has been formed on nitride layer 4 and a
polysilicon base electrode 8 is formed in and around an
opening in layer 5, the portions of layer 5 outside the base
electrode are removed, as indicated by the dashed lines. In
the resulting device, polysilicon base electrode 8 is
- 2 -
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