Appeal No. 1999-2576
Application 08/836,960
silicon oxide layer
202, a phospho-
silicat e glass (PSG)
layer 203, and
"silicone" (polysilicon) films 206a and 206b respectively
supporting aluminum base and emitter electrodes 208a and 208b:
In this structure phosphorus from PSG layer 203 diffuses into
polysilicon contacts 206a and 206b and thereby into the base
layer 204, creating an unwanted N-type layer 205 in the P-type
base layer and causing N-type emitter 209a to be deeper than
desired. Transl. at 4, 1st full para. Yorikane's solution,
shown in Figure 1, is to form a silicone nitride layer 106 for
- 8 -
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