Appeal No. 1999-2576
Application 08/836,960
separated from base region 10 by nitride diffusion barrier
layer 4, which
prevents further diffusion of the dopant from the
polysilicon of the base electrode into the silicon
of the base region 10. However, the diffusion
barrier is thin enough to enable the charge carriers
to pass virtually unhindered from the base electrode
8 into the base region 10 (tunnel effect), thereby
giving a small base supply resistance.
Specification at 4, ll. 8-12.
B. The claims
Claim 1, the sole independent claim, reads as follows:
1. A lateral bipolar transistor comprising: an
emitter region, a base region and a collector region
in a semiconductor layer; a base terminal region; on
said base region, a base electrode which is made up
of doped polysilicon material and which is separated
from said base region by a nitride diffusion
barrier; said diffusion region having a thickness
that is thin enough to enable charge carriers to
pass through said diffusion barrier such that the
transistor functions; said base electrode being
electrically conductively connected to said base
terminal region.
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