Appeal No. 1999-2576
Application 08/836,960
Appellant treats claims 2 and 3 as standing or falling
with claim 1. Brief at 4.
C. The references and rejection
The examiner relies on the following references:
McFarlane et al. (McFarlane) 5,355,015 (US)
Oct. 11, 1994
Yorikane 2 61-242072 (JP) Oct. 28,
1996
Edholm et al. (Edholm), A self-Aligned Lateral Bipolar
Transistor Realized on SIMOX-Material, 40 IEEE Transactions on
Electron Devices 2359-2360 (Dec. 1993).
Claims 1-3 stand rejected under 35 U.S.C. § 103(a) as
unpatentable for obviousness over Edholm in view of McFarlane
and Yorikane.
The examiner describes Edholm Figure 1, reproduced below,
as disclosing "an SOI [silicon-on-insulator] transistor
structure but fail[ing] to explicitly disclose the use of a
silicon nitride barrier layer formed between the polysilicon
base electrode and the underlying base region" (Answer at 3):
2Our understanding of this reference is based on a
translation obtained by the PTO (copy attached), which gives
the inventor's name as Yorigane instead of Yorikane, the name
appearing in the English-language abstract.
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