Appeal No. 1999-2576
Application 08/836,960
Yorikane's silicon nitride layer 106 is much thicker, at 500
D. Trans. at 7.
The § 103 rejection of claims 1-3 is therefore reversed. 3
REVERSED
)
JOHN C. MARTIN )
Administrative Patent Judge )
)
)
) BOARD OF PATENT
LEE E. BARRETT )
Administrative Patent Judge ) APPEALS AND
)
) INTERFERENCES
)
MICHAEL R. FLEMING )
Administrative Patent Judge )
JCM/sld
3We do not reach the question of whether claim 1
requires that the transistor be operated such that the charge
carriers pass through the silicon nitride diffusion barrier or
the question of whether it would have been obvious to use
McFarlane's N+ POLY region 24 as the base terminal.
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