Appeal No. 1999-2576
Application 08/836,960
As shown in Figure 2(a), after
the silicon dioxide and PSG
layers 102 and 103 have been
formed on the substrate 101,
holes 105a and 105b are formed
therein. Referring to
Figure 2(b), next a silicon
nitride layer 106 is formed on
the top of PSG layer 103, on the side walls of the holes, and
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