Appeal No. 2001-2544
Application No. 08/995,108
a) depositing a first layer of TaNx having a thickness
ranging from greater than about 10 Å to about 1000 Å;
b) depositing a second layer of Ta having a thickness
ranging from about 5 Å to about 500 Å; and
c) depositing a conductive layer over a surface of said
second layer of Ta, wherein the substrate temperature during said
conductive layer deposition and in subsequent processing steps is
less than about 500°C.
13. The method of Claim 8, wherein said combined barrier
layer and wetting layer structure is used in a contact via
structure, and wherein the thickness of said TaNx layer ranges
from about 10 Å to about 300 Å and the thickness of said Ta layer
ranges from about 5 Å to about 300 Å.
18. The method of Claim 8, wherein at least a portion of
said Ta layer is deposited using ion-deposition sputtering.
21. A method of producing a copper interconnect structure
comprising a combined TaNx/Ta barrier layer and wetting layer,
and an overlying copper layer, wherein the Cu <111>
crystallographic content of said overlying copper layer is at
least 70% of the Cu <111> crystallographic content which can be
obtained by depositing said copper layer over a pure Ta barrier
layer which is about 500 Å thick, said method comprising the
steps of:
a) depositing a first layer of TaNx having a thickness
ranging from greater than about 50 Å to about 1,000 Å;
b) depositing a second layer of Ta having as thickness
ranging from about 5 Å to about 500 Å over the surface of said
first layer of TaNx; and
c) depositing a third layer of copper over the surface of
said second layer of Ta, wherein at least a portion of said third
layer of copper is deposited using a physical vapor deposition
technique, and wherein the substrate temperature at which said
third layer of copper is deposited is less than about 500°C.
23. A method of producing a copper-comprising contact via
structure comprising a combined TaNx/Ta barrier layer and wetting
layer, and an overlying copper layer, wherein the Cu <111>
2
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