Ex Parte DING et al - Page 4



         Appeal No. 2001-2544                                                       
         Application No. 08/995,108                                                 
                                   The References                                   
              In rejecting the claims under 35 U.S.C. § 103(a), the                 
         examiner relies upon the following references:                             
         Hoshino                 4,985,750           Jan. 15, 1991                 
         Gelatos et al. (Gelatos) 5,391,517           Feb. 21, 1995                 
         Landers et al. (Landers) 5,676,587           Oct. 14, 1997                 
         Ngan                    5,707,498           Jan. 13, 1998                 
                                               (filed Jul. 12, 1996)                
                                   The Rejections                                   
              Claims 8-17 stand rejected under 35 U.S.C. § 103(a) as being          
         unpatentable over Gelatos in view of Landers.                              
              Claims 8-17 and 21-26 stand rejected under 35 U.S.C. §103(a)          
         as being unpatentable over Hoshino in view of Landers.                     
              Claims 18-20 stand rejected under 35 U.S.C. §103(a) as being          
         unpatentable over Gelatos in view of Landers for claims 8-17, and          
         further in view of Ngan.                                                   
              Claims 18-20 and 27 stand rejected under 35 U.S.C. §103(a)            
         as being unpatentable over Hoshino in view of Landers for claims           
         8-17, and further in view of Ngan.                                         
                                   The Invention                                    
              The invention relates to a TaNx/Ta barrier/wetting layer              
         which increases the degree of crystal orientation in an overlying          
         copper layer, thereby providing greater electromigration                   
         resistance of the copper  (Specification, page 1, lines 5-7).              

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