Appeal No. 2001-2544
Application No. 08/995,108
crystallographic content of said overlying copper layer is at
least 70% of the Cu {111} [sic, <111>] crystallographic content
which can be obtained by depositing said copper layer over a pure
Ta barrier layer which is about 300 Å thick, said method
comprising the steps of:
a) depositing a first layer of TaNx having a thickness
ranging from greater than about 10 Å to about 300 Å;
b) depositing a second layer of Ta having as thickness
ranging from about 5 Å to about 300 Å over the surface of said
first layer of TaNx; and
c) depositing a third layer of copper over the surface of
said second layer of Ta, wherein at least a portion of said third
layer of copper is deposited using a physical vapor deposition
technique, and wherein the substrate temperature at which said
third layer of copper is deposited is less than about 500°C.
27. A method of producing a copper-comprising contact
structure comprising a combined TaNx/Ta barrier layer and wetting
layer, and an overlying copper layer, wherein the Cu <111>
crystallographic content of said overlying copper layer is at
least 70% of the Cu <111> crystallographic content which can be
obtained by depositing said copper layer over a pure Ta barrier
layer which is about 300 Å thick, said method comprising the
steps of:
a) depositing a first layer of TaNx having a thickness
ranging from greater than about 10 Å to about 300 Å;
b) depositing a second layer of Ta having as thickness
ranging from about 5 Å to about 300 Å over the surface of said
first layer of TaNx; and
c) depositing a third layer of copper over the surface of
said second layer of Ta, wherein at least a portion of said third
layer of copper is deposited using a physical vapor deposition
technique, and wherein the substrate temperature at which said
third layer of copper is deposited is less than about 500°C,
wherein at least a portion of said first layer, or said
second layer, or said third layer, or a portion of a combination
of said layers, is deposited using ion-deposition sputtering.
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