The opinion in support of the decision being entered today was not written for
publication and is not binding precedent of the Board.
Paper No. 30
UNITED STATES PATENT AND TRADEMARK OFFICE
____________
BEFORE THE BOARD OF PATENT APPEALS
AND INTERFERENCES
____________
Ex parte SHUICHI EUNO, YOSHINORI OKUMURA,
SHIGENOBU MAEDA, and SHIGETO MAEGAWA
____________
Appeal No. 2003-2107
Application No. 09/429,283
____________
HEARD: April 13, 2004
____________
Before GROSS, BARRY, and SAADAT, Administrative Patent Judges.
GROSS, Administrative Patent Judge.
DECISION ON APPEAL
This is a decision on appeal from the examiner's final
rejection of claims 14 through 27, which are all of the claims
pending in this application.
Appellants' invention relates to a method of manufacturing a
semiconductor device having two types of transistors formed on a
single substrate. The method includes introducing an impurity
into the polysilicon layer of both transistors, wherein the
impurity dosage for one transistor differs from the impurity
dosage for the other. Claim 14 is illustrative of the claimed
invention, and it reads as follows:
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